data sheet semiconductor http://www.yeashin.com 1 rev.02 20120305 kbl005 thru kbl10 technical sp eci f ications of single-phase silicon bridge rectifie r voltage range-5 0 to 1000 volt s current-4.0 amperes fe a t ures ?e ideal for printed circui t b oard ?e surge ov erload r a ting : 20 0 ampere s pea k ?e mold ed structure ?e high tempera t ure sol dering : 260 o c / 10 se cond s at te r m inals ?e pb free produ ct a t av ailable : 99% s n abov e meet rohs env ironment su bst a nce dire ctiv e reque st m e c h an i c al d a t a ?e ca se :molded pla s ti c ?e epoxy : ul 94 v - 0 rate flame ret a rdan t ?e l ead: mil-std-2 02e,me t hod 208 gu aranteed ?e polari ty : sy mbols molded or mar k ed on body ?e m o u n ting po si tio n : any ?e w e ight: 4.8 gram s m a xim u m r a ti ng s a n d electric a l ch a r a c teristi c s ?e ra ting s a t 25 j ambien t tempera t ure unle s s o t herw i se sp eci f ied . ?e single pha se, hal f w a v e , 60 hz, resi stiv e or indu ctiv e load. ?e for capa citiv e lo ad, dera t e curre nt b y 20%. kbl005 kbl01 k bl02 kbl04 k b l 0 6 k b l 0 8 k b l 1 0 sy m b ol uni ts m a x i mum recurre n t peak rev e rse v o ltage vrrm 5 0 1 0 0 2 0 0 4 0 0 6 0 0 8 0 0 1 0 0 0 v o l t s m a x i mum r m s bri dge i nput vo l t age vrms 3 5 7 0 1 4 0 2 8 0 4 2 0 5 6 0 7 0 0 v o l t s m a x i mum dc blo cking voltage vdc 5 0 1 0 0 2 0 0 4 0 0 6 0 0 8 0 0 1 0 0 0 v o l t s m a x i mum a verage for w a rd output t a = 50 j io 4 . 0 a m p s peak for w a rd surge current 8.3 m s single ha lf sine- w av e super i mposed on r a ted l o ad (j edec method) if sm 1 5 0 a m a x i mum for w a rd voltage d r op per e l ement at 4 . 0 a dc v f 1 . 0 v o l t s @t a = 25 j 5 m a xi mum dc rever s e cur r e nt at rated dc bl ocki n g vol t age per element @t a = 100 j ir 500 amp i 2 t rati ng fo r fusing(t<8. 3ms) i 2 t 9 3 a2sec t y pi cal juncti on ca pacitance(note 1) c j 4 0 p f t y pi cal juncti on r esistance(note2) r c ja 19 j /w oper ati ng temp erature range tj -55 to + 1 50 j stor age tempe r atur e range tstg -55 to + 150 j notes: 1 . mea s ure d at 1 mhz and app lied rev e rse v o ltage of 4 . 0 v o lts 2 . thermal resi stance from junction to ambien t w i th units moun ted on 3 . 0x 3.0xx 0 .11?(7.5x 7 .5x 0 .3cm)al plate . 6& "# 3 max 91 1.0 25.4 1.1 27.9 .591(15.0) .567(14.4) kbl unit:inch(mm) parameter ?e thi s see r ies i s u l re cogni zed under compo nent index , file number e315292
http://www.yeashin.com 2 rev.02 20120305 kbl005 thru kbl10 device characteristics
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